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4V Drive Nch MOSFET
RSH065N03
Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter.
Each lead has same dimensions
Dimensions (Unit : mm)
SOP8
Packaging specifications
Package Type RSH065N03 Code Basic ordering unit (pieces) Taping TB 2500
Inner circuit
(8) (7) (6) (5) (8) (7) (6) (5)
2 1
(1) (2) (3) (4)
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board.
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits 30 20 6.5 26 1.6 6.4 2 150 -55 to +150
Unit V V A A A A W C C
(1)
(2)
(3)
(4)
1 ESD PROTECTION DIODE 2 BODY DIODE
A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Thermal resistance
Parameter Channel to ambient
Mounted on a ceramic board.
Symbol Rth (ch-a)
Limits 62.5
Unit C / W
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c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.A
RSH065N03
Electrical characteristics (Ta=25C)
Parameter Symbol Min. - 30 - 1.0 - - - 4.0 - - - - - - - - - - Typ. - - - - 19 27 30 - 430 155 80 8 8 31 8 6.1 1.5 2.3 Max. 1 - 10 2.5 27 38 42 - - - - - - - - 8.6 - - Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-starte resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
Unit A V A V m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=6.5A, VGS=10V ID=6.5A, VGS=4.5V ID=6.5A, VGS=4V ID=6.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.25A, VDD 15V VGS=10V RL=4.62 RG =10 VDD 15V VGS=5V ID=6.5A
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS=6.4A, VGS=0V
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c 2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.12 - Rev.A
RSH065N03
Electrical characteristic curves
1000
10000
Data Sheet
CAPACITANCE : C (pF)
Ciss
1000
tf td(off)
GATE-SOURCE VOLTAGE : VGS (V)
10
SWITCHING TIME : t (ns)
Ta=25C VDD=15V VGS=10V RG=10 Pulsed
8 Ta=25C 7 VDD=15V ID=6.5A 6 RG=10 Pulsed 5 4 3 2 1 0 0 1 2 3 4 5 6 7
100
Coss Crss
100
10
td(on) tr
Ta=25C f=1MHz VCE=0V 10 0.01 0.1
1
10
100
1 0.01
0.1
1
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
VDS=10V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10
300 250 200 150 100 50 0
Ta=25C Pulsed
100
Ta=125C
VGS=0V Pulsed
SOURCE CURRENT : Is (A)
DRAIN CURRENT : ID (A)
1
ID=3.25A
10
Ta=75C Ta=25C Ta= -25C
0.1
ID=6.5A
1
0.01
0.1
0.001 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
12
14
16
0.01 0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Source Current vs. Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VGS=10V Pulsed 1000
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS=4.5V Pulsed 1000
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10000
10000
10000 VGS=4V Pulsed 1000
Ta=125C Ta=75C Ta=25C Ta= -25C
100
100
100
10
10
10
1 0.1
1
10
1 0.1
1
10
1 0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ()
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c 2009 ROHM Co., Ltd. All rights reserved.
3/3
2009.12 - Rev.A
Notice
Notes
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